Tiefu Zhao, Ph.D.

Dr. Tiefu Zhao, Ph.D.

Associate Professor
Electrical and Computer Engineering
704-687-0939
EPIC 1160
Education:
  • Ph.D. North Carolina State University, USA, 2010
  • M.S. Tsinghua University, China, 2005.
  • B.S. with Excellent Graduate Honor, Tsinghua University, China, 2003.
Research:
  • Solid State Transformer and Solid State Circuit Protection
  • Wireless Power Transfer
  • Wide Bandgap Device Applications
  • Power Electronics Reliability and Fault Protection
  • Microgrid and Renewable Energy Integration
Selected Publications:
  1. L. Wang, T. Zhao, and J. He, “Investigation of Variable Switching Frequency in Finite Control Set Model Predictive Control on Grid-Connected Inverters,” in IEEE Open Journal of Industry Applications, vol. 2, pp. 178-193, 2021
  2. L. Wang, T. Zhao and J. He, “Centralized Thermal Stress Oriented Dispatch Strategy for Paralleled Grid-Connected Inverters Considering Mission Profiles,” in IEEE Open Journal of Power Electronics, vol. 2, pp. 368-382, 2021
  3. Y. Wang, L. Hou, K. C. Paul, Y. Ban, C. Chen and T. Zhao, “ArcNet: Series AC Arc Fault Detection Based on Raw Current and Convolutional Neural Network,” in IEEE Transactions on Industrial Informatics, 2021
  4. Y. Wang, T. Zhao, M. Rashidi, J. Schaar and A. Trujillo, “An Arcless Step Voltage Regulator Based on Series-Connected Converter for Branch Current Suppression,” in IEEE Journal of Emerging and Selected Topics in Power Electronics, 2020
  5. T. Zhao, G. Wang, S. Bhattacharya and A. Q. Huang, “Voltage and Power Balance Control for a Cascaded H-Bridge Converter-Based Solid-State Transformer,” in IEEE Transactions on Power Electronics, vol. 28, no. 4, pp. 1523-1532, April 2013
  6. X. She, A. Q. Huang, T. Zhao and G. Wang, “Coupling Effect Reduction of a Voltage-Balancing Controller in Single-Phase Cascaded Multilevel Converters,” in IEEE Transactions on Power Electronics, vol. 27, no. 8, pp. 3530-3543, Aug 2012
  7. J. Wang, T. Zhao, A. Q. Huang, R. Callanan, F. Husna and A. Agarwal, “Characterization, modeling and application of 10-kV SiC MOSFET,” in IEEE Transactions on Electron Devices, vol. 55, no. 8, pp. 1798–1806, Aug. 2008.
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